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Solder joints with Cu/Sn-Ag/Cu structure and bump height of 15 μm have been used to investigate the electromigration phenomenon at different temperatures and current densities. Moreover, the grain orientation was analyzed using electron backscatter diffraction. It was found that the anisotropic properties of tin affected the formation rate of Cu-Sn intermetallic compounds (IMCs), and that the angle...
The electromigration test of the microbump interconnects with Cu/Cu6Sn5/Cu structure is reported in this study. This Cu6Sn5 intermetallic compound layer was single-crystal like. The diameter of the microbumps in die-to-die stacking was 30 µm. Test vehicles were applied by a current density of 2.2×105 A/cm2 and settled on a hotplate at 150°C. The resistances of the microbumps were simultaneously monitored...
The requirement for smaller devices but with much greater performance leads to a boost in current density and damage caused by electromigration. Recently, some researches show that the grain orientation changes during current stressing. In this study, the solder of SnAg2.6 with 2 um-thick UBM layer of Ni and 20 um-thick copper pad is used. Electron Backscattered Diffraction (EBSD) is applied to investigate...
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