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Integrated circuits are often subjected to mechanical stress resulting from external loads or intrinsic stress caused by the mismatch in thermal expansion coefficients of the applied materials. Interconnects and vias in these circuits are particularly jeopardized when applied in complementary metal-oxide semiconductor (CMOS)-based microelectromechanical systems (MEMS). In this paper, we characterize...
This paper presents a scheme to predict the fatigue lifetime of polycrystalline silicon thin films under cyclic loading. The initial damage was characterized as an equivalent crack distribution from the results of quasi-static tensile tests, i.e., from the distribution of static strength. The fatigue crack extension process determining fatigue lifetime was then estimated by the well-known Paris law...
This paper reports a CMOS-integrated three-axial force sensor system realized using a post-CMOS compatible low-temperature fabrication process which allows to process single IC dies as obtained from multi-project wafer (MPW) runs. The sensor system can be applied in coordinate measurement machines used for three-dimensional metrology of microcomponents. It is based on a flexible micromechanical cross...
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