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Adequate modeling of a power metal-oxide-semiconductor field-effect transistor (MOSFET) is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high-voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform and record high-voltage capacitance versus voltage measurements on these devices. This paper...
A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high- frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation demonstrate that the circuit satisfies the gate drive requirements for the SiC power modules in applications such as the DARPA WBST-HPE solid state power...
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