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This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II program and will be used in the 13.8 kV, 2.75 MVA SSPS developed in the HPE Phase III program. The simulations are performed using recently developed and...
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