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This article presents a simple, non-toxic, and low-cost tips arrays made of poly-dimethylsiloxane pyramidal material, which is expected to have a large-scale application in the future civil biomedical field. A layer of silica and silicon nitride are grown on the silicon wafer as a corrosion mask by thermal oxygen and low pressure chemical vapor deposition process, sequentially. After lithography process,...
This paper develops a bumpless wafer-on-wafer (WoW) memory integration approach in order to increase its throughput and reliability without sacrificing the electrical and mechanical performances compared to the bump-containing chip-on-chip (CoC) integration. The features are that through silicon vias are bottom–up filled after multilayer wafers bonding and connected to the predeposited redistribution...
In this paper, a TGV interposer based wafer level packaging for inertial MEMS devices is presented. For the TGV interposer, there is a redistribution layer of Al wiring on each side, which are electrically connected with Al metalized TGV. Being as a capping wafer, it's bonded to a MEMS accelerometer wafer based on bulk silicon process with a patterned benzocyclobutene(BCB) layer to achieve wafer level...
In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361µm in the diameter at the front side,...
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