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This paper proposes an interposer fabrication methods with annular copper through-silicon via (TSV) and multi-layered redistribution layer. Additives, current density, forced convection and environment temperature are taken into consideration in order to realize the equal-wall annular TSV filling. A multi-layered redistribution layer is fabricated on the front-side of interposer employing electroplating...
In this paper, a TGV interposer based wafer level packaging for inertial MEMS devices is presented. For the TGV interposer, there is a redistribution layer of Al wiring on each side, which are electrically connected with Al metalized TGV. Being as a capping wafer, it's bonded to a MEMS accelerometer wafer based on bulk silicon process with a patterned benzocyclobutene(BCB) layer to achieve wafer level...
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