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This article deals with an early growth study of hydrogenated and non-hydrogenated amorphous silicon carbide thin films (a-SiC:H, a-SiC). Sample have been elaborated at room temperature by a new configuration (Up-down) sputtering d.c. magnetron technique, using a 6H-SiC polycrystalline target onto p-Si(100) and glass substrates. The infrared spectra reveal the existence of a band located at 740 cm...
Crystalline silicon carbide thin layers were grown on a p-type Si(100) substrate by pulsed laser deposition (PLD) using KrF excimer laser at λ=248nm from a 6H–SiC hot-pressed target. The target “SiC” used to elaborate our SiC films is realized from a mixture of 1SiO 2 with 3C (carbon) “1SiO 2 +3C” heated in an oven at 2500°C (the target was a hot-pressed material and supplied by Goodfellow)...
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