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Amorphous Si 1-x Ge x layers with Ge fractions up to x=0.38 were deposited by low pressure chemical vapor deposition. Polycrystalline layers were obtained by solid-phase crystallization of the amorphous ones. Both types of layers were studied by Raman spectroscopy. The influence of the Ge fraction on the Raman spectrum of the amorphous and polycrystalline layers was analyzed...
Porous silicon layers have been prepared from n-type Si wafers of 20-50 Ω cm. The influence of current density and electrolysis time on the intensity and peak position of the photoluminescence (PL) band has been investigated. It has also been observed that the PL intensity increases with the time after preparation of porous Si.
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