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The formation of interfacial silicon oxide accompanying the deposition and annealing of zirconium oxide films on Si(100) has been examined. Plasma sputtering of either ZrO 2 or Zr was used and, prior to analysis by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), the resulting films were exposed to ambient air and/or were annealed in O 2 or N 2 . Oxygen-containing...
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