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In this work, we present a true 3D 128 Gb 2 bit/cell vertical-NAND (V-NAND) Flash product for the first time. The use of barrier-engineered materials and gate all-around structure in the 3D V-NAND cell exhibits advantages over nm planar NAND, such as small Vth shift due to small cell coupling and narrow natural Vth distribution. Also, a negative counter-pulse scheme realizes a tightly programmed...
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