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Three-dimensional structure of the Si(001) 2 1 surface has been studied using a newly constructed instrument for in-situ characterization of surfaces by X-rays. This instrument consists of a six-circle diffractometer and an ultra-high vacuum chamber capable of molecular beam epitaxy. Measured intensities along four fractional-order reciprocal rods have been analyzed on the basis of an asymmetric...
The atomic structure of the Si(001)2 1 clean surface has been investigated by surface X-ray diffraction technique. Its sensitivity to both in-plane and out-of-plane directions has allowed three-dimensional analysis of the atomic arrangement. The least squares fitting has given the asymmetric dimers whose bond length is 2.37±0.06 and buckling angle is 20±3° with the strain of the substrate over...
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