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To reduce the effective k-value for the 45-nm node, direct CMP of a porous SiOC film without a protective cap layer is required. The hydrophilic-lipophilic balance (HLB) of a surfactant included in the post-CMP cleaning chemical was found to be a parameter that determines SiOC film damage and cleaning ability after direct CMP. To suppress the k-value increase and watermark generation, we need to reduce...
To reduce the effective k-value to less than 2.7 for the 45-nm node, direct CMP of a porous SiOC film (k = 2.3-2.6) without a protective cap layer was applied to Cu damascene fabrication by using a damage-less sacrificial film process. The key is controlling the molecular size of surfactants in the CMP slurries or cleaning chemicals, which are related to the moisture uptake and watermark generation...
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