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Resistive switching processes in HfO2 are demonstrated by electron holography and in situ energy filtered imaging in article number 1602976 by Jinfeng Kang, Richeng Yu, and co‐workers. The results identify that oxygen vacancies are generated gradually in the oxide layer under ramped electrical bias, resulting in the formation of conductive channels, and the switching process occurs at the top interface...
Resistive switching processes in HfO2 are studied by electron holography and in situ energy‐filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It also shows that the switching process occurs at the top interface of the hafnia layer.
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