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Annealing Pb(Zr1−xTix)O3 (PZT) thin films in the hydrogen ambient can result in the unacceptable degradation of ferroelectric properties due to interaction of H2 forming gas with the ferroelectric materials. Since the understanding of this degradation mechanism is limited, this issue arouses a big problem for the application of PZT in high‐density non‐volatile ferroelectric random access memories...
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