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Eu ions were doped into InGaN by organometallic vapor phase epitaxy. The influence of In composition on the optical properties of Eu-doped InGaN (InGaN:Eu) was investigated using photoluminescence (PL), and combined excitation-emission spectroscopy (CEES). The PL spectra of InGaN:Eu showed a new series of emission lines, which became dominant with increasing In content. CEES measurements confirmed...
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