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The effects of in situ CBrCl 3 etching of InAs quantum dots (QDs) grown on GaAs by metal-organic vapor phase epitaxy have been studied in detail for control of the size and density of InAs dots. The width and height distributions of InAs dots after etching for various etching times and CBrCl 3 flow rates suggest that the CBrCl 3 etching is ineffective in decreasing the width...
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