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The tunneling assisted charge exchange on the inner interface of high dielectric constant (high-k) dielectric stacks has been studied. The charging and discharging of traps existing at the HfO2/SiNx interlayer increase the transient capacitance amplitude, and so deep level transient spectroscopy (DLTS) measurements provide overestimated interfacial state density (Dit) values. This effect is quite...
The electrical characterization of ZrO2-based MIS structures fabricated by ALD on SiO2/Si substrates with monocyclopentadienyls of zirconium, ZrCp(NMe2)3, as precursors was carried out. These precursors combine the beneficial properties related to the high thermal stability of the Cp compounds with the high growth rate and tendency of forming high permittivity cubic or tetragonal ZrO2 phases of the...
In this work, we show the existence of flat-band voltage transients in MIS capacitors with ultrathin high-k dielectric films. The transients are obtained when recording the gate voltage while keeping the capacitance constant at the value of flat-band condition (CFB). Gadolinium oxide and hafnium oxide are studied in this work. Transient time constant seems to be temperature independent, whereas the...
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