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By use of Ti-mask selective area growth (SAG) technique by rf-MBE for Ga, various regularly arranged InGaN-based nanocolumn arrays with triangular-lattice arrays were grown on the same substrate; three-period InGaN/GaN MQWs were prepared at top regions of the nanocolumns. Change in the emission color from blue to red with increasing the nanocolumn diameter was observed for the samples. Here, the photoluminescence...
Uniform arrays of GaN nanocolumns periodically arranged in triangular-lattice, at the top regions of which InGaN/GaN multiple quantum wells (MQWs) were integrated, were grown on GaN templates by rf-MBE using Ti-mask selective area growth (SAG) technique. Here the lattice constant of array L and nanocolumn diameter D were controlled from 200 to 300 nm and from 0.7L to 0.9L, respectively. the paper...
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