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For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.
In this paper, strain induced Si MOSFETs with multiple contact positioning strategies are simulated by ISE TCAD tool. The strain distribution of the MOSFETs with symmetric and asymmetric drain/source structure is investigated. The performance of the devices such as the Idsat and transfer characteristics is also simulated and compared. The results will help to model the characteristics of MOSFETs considering...
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