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Porous materials such as ultra low-k dielectrics are commonly used in micro and nano technologies. Since porosity leads to an increased sensitivity of the material to etching and post-etching plasma processes, porosity, pore size and surface modifications need to be assessed during material integration. In this work, the recently developed Scatterometric Porosimetry technique using a porosimetry acquisition...
Porous ultra low-k (ULK) dielectrics are used to reduce resistance–capacitance delay for advanced complementary metal oxide semiconductor interconnects. Since the porosity leads to an increased sensitivity of the material to plasma processes (etching and post-etching plasmas), dedicated characterization techniques are needed to assess the ULK properties during its integration. This study shows that...
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