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Ion-beam induced effects in Ar and Xe implanted <110> and <100> MgO are studied at 15K using Rutherford backscattering spectrometry (RBS). At very low ion fluences the concentration of defects is only determined by the energy density deposited in nuclear processes. Point defects and clusters of point defects are produced with an efficiency of 0.5 independent of ion species, ion energy...
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