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We present here experimental results on the gettering of iron in Czochralski-grown silicon by phosphorus implantation. The gettering efficiency and the gettering mechanisms in a high resistivity implanted emitter are determined as a function of both initial iron level and gettering anneal. The results show that gettering in implanted emitters can be efficient if precipitation at the emitter is activated...
Precipitation of iron in multicrystalline (mc) silicon during typical solar cell processing is investigated with an advanced model that has been previously demonstrated to be able to simulate the iron distribution in two dimensions. The improving detection limits of precipitate measurements with x-ray fluorescence microscopy (μ XRF) allow a first comparison of measured and simulated precipitate densities...
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