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The influence of epitaxial growth conditions such as C/Si ratio, growth temperature and growth rate on the propagation of basal plane dislocation from a 4H-SiC substrate to the epilayer was studied by reflection X-ray topography. It was observed that the growth temperature has no effect on the propagation of basal plane dislocation. On the contrary, a large number of basal plane dislocations in the...
Screw dislocation, threading edge dislocation and basal plane dislocation in 4H-SiC substrates and epitaxial layers were observed by X-ray topography using synchrotron radiation. Distribution of basal plane dislocation is markedly different between substrates and epitaxial layers. Basal plane dislocations in the substrate are arc-shaped and show no distribution direction. Conversely, those in the...
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