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Amorphous silicon oxynitride (a‐SiNxOy) film is a kind of new luminescent material, which exhibits highly efficient light emission from luminescent N–Si–O defect states. In this work, the measurements of steady‐state photoluminescence (SSPL), temperature‐dependent photoluminescence (TDPL), and nanosecond time‐resolved photoluminescence (ns‐TRPL) are combined to further verify the role of luminescent...
Hydrogenated amorphous Si films were prepared by a plasma‐enhanced chemical vapor deposition technique. As‐deposited samples were then thermally annealed at various temperatures to obtain nanocrystalline silicon films. The microstructures and carrier‐transport characteristics were investigated during the transition process from amorphous to nanocrystalline phase. It was found that the Hall mobility...
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