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Based on the energy and momentum balance equations and three-dimensional Schrödinger equations, a physical model of the quantum coupling and electrothermal effects on the electron transport in GaN transistors is proposed. Quantum coupling and electrothermal effects in GaN transistors cause a reduction in the barrier height, changes in the quantised energy levels of the two-dimensional electron gas,...
The quantum capacitance, an important parameter in the design of nanoscale devices, is derived for armchair-edge single-layer graphene nanoribbon with semiconducting property. The quantum capacitance oscillations are found and these capacitance oscillations originate from the lateral quantum confinement in graphene nanoribbon. Detailed studies of the capacitance oscillations demonstrate that the local...
. The comparison of the inversion electron density between a nanometer metal-oxide-semiconductor (MOS) device with high-K gate dielectric and a SiO2 MOS device with the same equivalent oxide thickness has been discussed. A fully self-consistent solution of the coupled Schrödinger–Poisson equations demonstrates that a larger dielectric-constant mismatch between the gate dielectric and silicon substrate...
Based on the analysis of the three-dimensional Schrödinger equation, the effects of quantum coupling between the transverse and the longitudinal components of channel electron motion on the performance of ballistic MOSFETs have been theoretically investigated by self-consistently solving the coupled Schrödinger-Poisson equations with the finite-difference method. The results show that the quantum...
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