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In present work, we carried out the investigations of plasma-induced etching damage for the PZT thin films etched using the various Cl-based gas chemistries. The basic gas mixture was Cl 2 /CF 4 (8/2) while Ar or O 2 were used as the additive gases (up to 20%). It was found that the etching in Cl 2 /CF 4 /Ar plasma provides higher a rate but degrades the remnant...
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