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In this study, we investigated the etching characteristics of indium tin oxide (ITO) thin films at CF 4 /Ar plasma. The maximum etch rate of 29.8 nm/min for the ITO thin films was obtained at CF 4 /Ar (=80/20) gas mixing ratio. The standard conditions were the RF power of 800 W, the DC-bias voltage of −150 V, the process pressure of 2 Pa, and the substrate temperature of 40 °C. Corresponding...
In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity) of HfO 2 thin films in the CF 4 /Ar inductively coupled plasma (ICP). The maximum etch rate of 54.48 nm/min for HfO 2 thin films was obtained at CF 4 /Ar (=20:80%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters...
In this work, the etching properties of titanium dioxide (TiO 2 ) thin film in additions of O 2 at CF 4 /Ar plasma were investigated. The maximum etch rate of 179.4 nm/min and selectivity of TiO 2 of 0.6 were obtained at an O 2 /CF 4 /Ar (=3:16:4 sccm) gas mixing ratio. In addition, the etch rate and selectivity were measured as a function of the etching...
In this study, we investigated to the etch characteristics of indium zinc oxide (IZO) thin films in a CF 4 /Ar plasma, namely, etch rate and selectivity toward SiO 2 . A maximum etch rate of 76.6 nm/min was obtained for IZO thin films at a gas mixture ratio of CF 4 /Ar (25:75%). In addition, etch rates were measured as a function of etching parameters, including adaptively...
In this study, we carried out an investigation in the etching characteristics of TiN thin films in a C1 2 /Ar adaptive coupled plasma. The maximum etch rate of the TiN thin films was 768 nm/min at a gas mixing ratio of C1 2 (75%)/Ar (25%). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed...
In this research, we investigated the TaN etch rate and selectivity with under layer (HfO 2 ) and mask material (SiO 2 ) in inductively coupled CH 4 /Ar plasma. As the CH 4 content increased from 0% to 80% in CH 4 /Ar plasma, the TaN etch rate was increased from 11.9 to 22.8 nm/min. From optical emission spectroscopy (OES), the intensities for CH [431 nm] and...
In this study, we monitored the HfAlO 3 etch rate and selectivity to SiO 2 as a function of the etch parameters (gas mixing ratio, RF power, DC-bias voltage, and process pressure). A maximum etch rate of 52.6 nm/min was achieved in the 30% BCl 3 /(BCl 3 + Ar) plasma. The etch selectivity of HfAlO 3 to SiO 2 reached 1.4. As the RF power and the DC-bias...
Investigations of the influence of gas pressure and input power on the Cl 2 plasma parameters in the inductively coupled plasma system were carried out. The investigations combined plasma diagnostics by Langmuir probe with plasma modeling represented by the self-consistent global model with Maxwellian approximation for the electron energy distribution function. From the experiments, it was...
The etching behaviour of MgO thin films in BCl 3 /Ar plasma was investigated. It was found that the increasing Ar mixing ratio under the constant total pressure conditions causes the monotonic decrease of MgO etch rate, which falls from 93 to 17nm/min. Plasma diagnostics combined with a 0-dimensional plasma model showed the noticeable sensitivity of both electron temperature and electron density...
In this work, we investigated the influence of the Cl 2 /O 2 mixing ratio on both the plasma parameters and the volume densities of the neutral and the charged particles in inductively coupled plasma system. The change in the gas mixture composition from pure Cl 2 to O 2 was found to lead to an increase in the electron density and in the electron temperature. Accordingly,...
In this work, we carried out investigations aimed at understanding the effect of gas mixing ratio on plasma parameters, gas phase composition and etch rate in CF 4 /Ar inductively coupled plasma. For this purpose, a combination of experimental methods and modelling was used. Experiments showed that electron temperature and electron density are not very sensitive to variations of Ar content...
La 0.5 Sr 0.5 CoO 3 (LSCO) thin films were prepared using metal-organic decomposition method by spin-coating onto a Si (100) substrate. Both the structure and morphology of the films were analyzed by X-ray diffraction and atomic force microscope. The LSCO thin films annealed at 550-700 o C for 1h showed a polycrystalline phase and dense microstructure...
Etching characteristics of (Pb,Sr)TiO 3 (PST) thin films were investigated using inductively coupled chlorine-based plasma system as functions of gas mixing ratio, radio frequency power and direct current bias voltage. It was found that the increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is 56...
Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO 3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by X-ray diffraction and atomic force microscope. Even at low temperatures ranging from 450 o C to 650 o C,...
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