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Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a leading candidate for embedded memory applications, with promises of low power, high performance, and non-volatility.
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
The recent rise of mobile applications such as Internet of Things (IoT), wearable electronics, and context aware computing has renewed the search for a universal embedded memory technology [1]. Such a technology should combine fast read/write, low voltage operation, low power consumption, non-volatility, infinite endurance, with CMOS process compatibility. Magnetic Random Access Memory based on Spin...
We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ∼10x reduction in switching energies (compared to STT) with leakage currents < 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external...
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