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This paper discusses the modeling and experimental results for a new family of electronic devices in which a Schottky metal is placed in direct contact to a low dimensionality structure such as a quantum-well or a quantum wire. Based on those principles, we experimentally demonstrate the improved performance of both a microwave varactor and a MSM photodetector. The results are explained in terms of...
In this paper we derive the I–V characteristics of Schottky contacts based on bulk metal to semiconductor quantum wires interfaces. The obtained results show that quantum confinement is a strong reduction of the reverse saturation current when compared to conventional Schottky contacts. Numerical simulations are carried out to highlight the advantages of using these proposed heterodimensional interfaces...
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