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The mechanism of Si outdiffusion related to the formation of Si‐rich GaN clusters during the growth of GaN‐on‐Si by plasma‐assisted molecular beam epitaxy (PAMBE) has been identified. GaN thin films were grown, on high resistivity Si (111) substrates at Ga‐rich conditions to favour the 2D step‐flow growth mode. Hall‐effect measurements revealed very high electron background concentrations, ranging...
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