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We report a novel strategy to enhance the rate capability of Si–C composite by facile boron doping. Boron doping was confirmed by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The boron-doped Si–C composite shows much improved rate capability, delivering a capacity of 575mAh/g at 6.4 A/g without any external carbon additive, 80% higher than that of...
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