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A novel contact-first approach for III–V FinFETs and trigate MOSFETs is presented. In this process, the metal contact is sputtered on the as-grown semiconductor heterostructure, and the contact metal is used as a part of the fin dry-etch mask. We demonstrate this technique in Mo/n+-InGaAs contact structures with fin widths in the range of 50 to 300 nm. We have measured contact resistance in the range...
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