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The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO2 substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar+ ion sputtering, under various bombardment conditions with...
The interdiffusion upon annealing Cu/Ni multilayers structures at 325°C, 350°C and 375°C for 30min were investigated by Auger electron spectroscopy (AES) depth profiling. The Cu/Ni multilayers structures were deposited on a SiO2 substrate by means of electron beam evaporation in a high vacuum. The measured AES depth profiles of the as-deposited and annealed samples were quantitatively fitted by the...
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