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A capacitive micromachined ultrasonic transducer (CMUT) was fabricated using a standard 0.25-mum CMOS backend-of-line process. By adopting the planarization of dielectric material between the upper and lower electrodes by chemical mechanical polishing (CMP), we achieved a time-dependent dielectric breakdown (TDDB) lifetime exceeding 10 years at a DC stress voltage of 192 V. In the case of DC and AC...
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