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4H-SiC is considered one of the most promising next-generation semiconductor materials. Therefore, flattening methods of 4H-SiC and their mechanism have been widely studied in recent years. Although the generation of different types of step-terrace structure of 4H-SiC has been widely reported, their generation mechanism has not been thoroughly clarified. In this manuscript, the change of the surface...
Plasma-assisted polishing (PAP), which combined the irradiation of atmospheric-pressurewater vapor plasma and ceria abrasive polishing, was proposed for the finishing of difficult-to-machine materials, such as single crystal SiC, GaN, sapphire and diamond. In the case of PAP was applied to a 4H-SiC-Si face, an oxide layer (SiO 2 ) was generated after plasma irradiation and it was removed by...
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