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Cubic silicon carbide (3C‐SiC) is an emerging material with promising properties for various applications in power electronics, energy saving, and quantum technology. In recent years, size and quality of 3C‐SiC substrates reached a level where real applications become tangible. However, there is still a lack of knowledge concerning defects in 3C‐SiC. Point defects can be considered as one of the...
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