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3D VLSI technology based on CoolCube™ process offers ultra-high density of integration with up to 108 3D Vias (3D-V) per mm2 offering gate level 3D integration capability. For process stability and wide range of temperature compliancy, Intermediate Back End of Line (IBEOL) is targeted to be made with Tungsten lines in a SiO2 (k=3.9) dielectric, increasing equivalent resistivity by 6 and capacitance...
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