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In this work, we have systematically investigated the technique of low‐temperature AlN interlayer in MOCVD growth of double heterojunction high‐electron‐mobility transistors buffer stacks on 200 mm Si (111) substrates. We have demonstrated that a continuous compressive stress can be maintained by insertion of interlayers which compensated a large tensile stress during cooling for a thick buffer. This...
AlGaN/GaN/AlGaN double heterojunction high‐electron‐mobility transistors were grown on 200 mm Si (111) using metalorganic chemical vapor deposition. The Al composition of AlGaN barrier varied from 20 at% to 30 at% and thickness from 10 nm to 20 nm. In some structures, a 1 nm AlN interlayer was inserted between AlGaN barrier and GaN channel. The as‐grown wafers were proven to be of high material quality...
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