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Double half‐Heusler Ti2FeNiSb2‐based compounds, which can be regarded as a combination of 17‐electron TiFeSb and 19‐electron TiNiSb, have a lower intrinsic thermal conductivity due to the smaller group velocity phonons and the disordered scattering by Fe/Ni. An enhanced room‐temperature Hall carrier concentration of ≈4.8 × 1021 cm−3 is achieved by doping Sn on the Sb site in a series of Ti2FeNiSb...
Bi2S3 thermoelectric materials have received extensive interests due to the ultrahigh abundance of sulfur element in the Earth׳s crust. However, the high electrical resistivity of pristine Bi2S3 leads to a low ZT value. In this work, incorporating small amounts of CuBr2 into Bi2S3 system prepared by melting and spark plasma sintering can remarkably enhance the thermoelectric performance. Cu intercalation...
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