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We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs)...
Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p-GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge luminescence energy of the nano-LEDs could be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates; it depends linearly on the structure size. The...
We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation...
Constructing maps of loss or deterioration of power quality, due to stationary and non-stationary disturbances, is of great importance for the control, protection and analysis of power systems. Therefore, a technique for two- and three-dimensional maps visualization of the deterioration of power quality in electrical networks based in the power tensor theory is proposed. The objective of the technique...
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