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We investigated hot phonons based on Stokes Raman scattering from a GaN/AlN high electron mobility transistor. Such a simple method is advantageous compared with the method based on Stokes and anti-Stokes Raman scattering.
MgO-doped periodically-poled LiNbO3 waveguide is used to up-convert photons at 1.535–1.568 μm to those at 598–603 nm, which can be detected by avalanche photodetector at single-photon counting level. Conversion efficiencies up to 45% are achieved.
In this work, we have successfully induced SmCo5-(0001) texture using the Ni4W-(211) underlayer. A tungsten (W) seed layer of 4 nm resulted in a nanocrystalline (211)-textured Ni4W underlayer deposited at room temperature. Highly (0001)-textured SmCo5 was achieved after the sputtering deposition in the temperature range of 500-540??C. The crystallinity of the SmCo5 layer was reduced at higher deposition...
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