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In this paper we will present integrated time dependent variability tool flow that links statistical TCAD simulations, statistical compact model extraction and statistical circuit simulation. This allows the concepts of Design-Technology Co-Optimization (DTCO) to be extended into the reliability domain. The simulations are based on Gold Standard Simulations' (GSS) 3-D Kinetic Monte Carlo TCAD technology,...
We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.
We demonstrate that broadband terahertz radiation can be trapped by periodic arrays of split-ring resonators and released instantaneously by means of optical absorption. Such phenomena can open up novel applications.
Tunable plasmonic bandgaps were achieved on adiabatically graded grating structures. Light of different wavelengths is “trapped” at different positions along the grating, consistent with computer simulations, thus verifying the intriguing “rainbow” trapping effect.
Direct measurements on graded grating structures show that light of different wavelengths in the 500–700nm region is “trapped” at different positions along the grating, consistent with theoretical predictions, thus verifying the “rainbow” trapping effect.
Direct measurements on graded grating structures show that light of different wavelengths in the 500-700 nm region is “trapped” at different positions along the grating, consistent with theoretical predictions, thus verifying the “rainbow” trapping effect.
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
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