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C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in <roman>O</roman>2, NO, and in <roman>O</roman>2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and...
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