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Processing of electron-irradiated (energy 40 keV, doses up to 2.5 × 10 16 cm − ) oxygen-containing Czochralski silicon (Cz-Si) at up to 1400 K under hydrostatic Ar pressure up to 1.1 GPa results in oxygen accumulation at irradiation-induced irregularities. As revealed by electrical measurements, treatment at about 720 K produces small oxygen clusters exhibiting thermal donor activity...
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