Search results for: E. Atanassova
Items from 81 to 81 out of 81 results
Thin Oxide MOS Damages Caused by Wafer Charging in Magnetized Helium Plasma
The effect of nonuniform He plasma on the properties of thin Si - SiO2 structures has been studied. The plasma reactor system used is a magnetically enhanced like reactive ion etch reactor. The damage effects in MOS structures were determined as a function of Al gate thickness (60 - 1000nm) and plasma parameters. The results indicate strong correlation between plasma induced charge build-up and Al...
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