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This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channel consisting of dense, aligned, 99% pure semiconducting single-walled CNT is deposited using the dip-coat technique on a sacrificial substrate and then transferred on the device substrate. The source, drain, and gate structures are formed by the...
In this study, our main goal is to evaluate the effects of residual stress between devices and interconnections after various processes and being applied a bending load on the electrical performances. Moreover, both the Contact Characteristics and metal-oxide-semiconductor field-effect transistor (NMOSFET) NMOS Performance of ACF-Bonded ultra-thin chip-on-olex (UTCOF) Interconnects under bending load...
We fabricated the single-crystalline Ge (sc-Ge) p-channel thin-film transistors (TFTs) with Schottky-barrier source/drain (S/D) on flexible polyimide substrates by a simplified low-temperature process (≤ 250°C), which preserves the high mobility Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the sc-Ge thin film onto polyimide substrates. The device has a linear...
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