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The nanocrystalline SiC films were prepared on Si (111) substrates by rf magnetron sputtering and then annealed at 800°C and 1000°C for 30 minutes in a vacuum annealing system. The crystal structure and crystallization of as-annealed SiC films were determined by the Fourier transform infrared (FTIR) absorption spectra and the X-ray diffraction (XRD) analysis. Measurement of photoluminescence (PL)...
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