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We measured Radio-Frequency (RF) performance of devices with graphene grown using low temperature Inductively-Coupled Plasma Chemical Vapor Deposition (ICP-CVD) method on 6-inch wafer for the first time. To remove the coupling of electrode in-plane, we introduced locally-embedded-back-gate using TiN metal. The symmetric structure of 2-gate fingers was adopted to reduce misalign issue during fabrication...
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