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In this paper, the invar alloy nanocontact structures with different widths were fabricated using the electron beam lithography (EBL) and lift-off technique. Through the I–V measurement, we found that a domain wall (DW) could be pinned at the contact position and pushed away by the spin-polarized current when the width of nanocontact less than 300nm, which induced the change of the nanocontact resistance,...
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