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A reliable Cu–Cu bonding joint was achieved by using the highly sinterable Cu nanoparticle paste. Pure copper nanoparticles used in the preparation of nanoparticle paste were synthesized through simple routes, with an average size of 60.5 nm. Under an Ar-H2 gas mixture atmosphere, the Cu nanoparticle paste exhibited large areas of fusion after sintering at 300 °C and reached a low electrical resistivity...
We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO2 nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate SiO2 nanostructures including...
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